High-performance and low-voltage divider circuits fabricated in SiGe:C HBT technology

Dynamic and static frequency dividers with a maximum operating frequency of up to 72 GHz were developed for use in wired and wireless communication systems. The frequency dividers were fabricated with an low-cost 0.25 µm SiGe:C BiCMOS technology. The divider circuits were measured at wafer level and at module level. The first focus of the paper is on high speed to cover demands of high data rate communication. The second focus is on low voltage and low power operation with supply voltages down to 1V and sub 1 mW power consumption.