Title :
Temperature dependence of apparent threshold voltage of silicon MOS transistors at cryogenic temperatures
Author :
Nathanson, H.C. ; Jund, C. ; Grosvalet, J.
Keywords :
Cryogenics; MOSFETs; Microwave measurements; Microwave theory and techniques; Noise generators; Noise measurement; Probability density function; Silicon; Temperature dependence; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 1967 International
Conference_Location :
IEEE
