Silicon Schottky barrier avalanche diodes

Silicon Schottky barrier avalanche diodes have been fabricated which are superior in many important respects to comparable diffused avalanche diodes. These, diodes employ a platinum-silicide, metallurgical barrier and are mounted with the barrier--junction metallization thermally compression bonded to the copper heat-sink. Diodes have been made with transit-time operation from low X-band through K-band. At X-band CW efficiencies in excess of 5% at the relatively low current density of 500 A/cm²have been achieved. The thermal impedance was lower than for similarly mounted diffused diodes and for the above performance figures a junction temperature rise of only 150°C was observed. At Ku and K-band efficiencies of ∼2% were achieved and although the current densities were higher junction temperature rises above ambient were less than 200°C.