DocumentCode :
439964
Title :
Planar indium antimonide n-channel IGFET by proton bombardment
Author :
Pond, R.J. ; Yon, E.T.
Volume :
17
fYear :
1971
fDate :
1971
Firstpage :
30
Lastpage :
32
Abstract :
Low leakage n on p diodes have been fabricated using a proton bombardment technique. These diodes typically exhibit less than 1µa of reverse current at 5 volts reverse bias for a 13.6 × 13.6 mil junction area. Breakdown voltages of about 10 volts are obtained for material with a bulk acceptor concentration of 
cm--3.
cm--3.Keywords :
FETs; Frequency; Gallium arsenide; Germanium alloys; Indium; Laboratories; Protons; Solid state circuits; Temperature; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1971 International
Conference_Location :
IEEE
Type :
conf
Filename :
1476696
Link To Document :
