• DocumentCode
    439966
  • Title

    GaAs FET technology and performance

  • Author

    Hooper, W.W. ; Fairman, R.D.

  • Volume
    17
  • fYear
    1971
  • fDate
    1971
  • Firstpage
    32
  • Lastpage
    32
  • Abstract
    GaAs FETs have been fabricated which show fmaxto be greater than 30 GHz, and a noise figure of 3 dB at 4 GHz and 4 dB at 8 GHz. This excellent performance achieved using a gate length of 2 µm and conventional masking techniques, results from low contact resistance and high electron mobility of the epitaxial film. Because of the relatively large dimensions of the gate no special methods such as electron beam exposure or projection masking are required.
  • Keywords
    Coatings; FETs; Frequency; Gallium arsenide; Germanium alloys; Laboratories; Liquid crystals; Solid state circuits; Temperature; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1971 International
  • Conference_Location
    IEEE
  • Type

    conf

  • Filename
    1476698
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=439966