DocumentCode
440035
Title
Oxygen recoil during implantation of as into SiO2 films
Author
Goetzberger, A. ; Bartelink, D.J. ; McVittie, James P. ; Gibbons, J.F.
Volume
21
fYear
1975
fDate
1975
Firstpage
15
Lastpage
16
Keywords
Current measurement; Implants; Impurities; Oxygen; Photonic band gap; Semiconductor films; Switches; Temperature distribution; Temperature measurement; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1975 International
Conference_Location
IEEE
Type
conf
Filename
1478347
Link To Document