DocumentCode
440060
Title
Determination of low-noise ion implantation profiles in MOS transistors and related process and device modeling
Author
Zimmer, G. ; Gabler, L. ; Hoefflinger, B. ; Schemmert, W. ; Schneider, Jurgen
Volume
22
fYear
1976
fDate
1976
Firstpage
12
Lastpage
13
Keywords
Annealing; Boron; Charge carrier processes; Impurities; Ion implantation; MOSFETs; Niobium; Scattering; Tail; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1976 International
Conference_Location
IEEE
Type
conf
Filename
1478856
Link To Document