An Mo gate 4 K static RAM fabricated using a novel direct contact technology

A novel direct contact fabrication technology for Mo gate MOS LSIs has been developed, A feature of the new technology is that the direct contact hole silicon surface is covered with a uniform and thin Mo silicide film, The Mo silicide film was formed with sufficient reproducibility by As implantation through thin (∼100 Å) Mo film and subsequent annealings, Mo/Mo silicide/n⁺-Si direct contact showed remarkable improvement in thermal durability, A high speed 4 K bit static MOS RAM was fabricated using the above-mentioned direct contact technology combined with 1 µm effective channel Mo gate MOS technology.