DocumentCode
440080
Title
Consistent processing and long term stability of CdTe devices
Author
Barth, K.L. ; Enzenroth, R.A. ; Sampath, W.S.
Author_Institution
Mater. Eng. Laboratory, Colorado State Univ., Fort Collins, CO, USA
fYear
2005
fDate
3-7 Jan. 2005
Firstpage
323
Lastpage
326
Abstract
A technology for processing of thin film CdS/CdTe devices has been developed in our laboratory. This in-line, continuous, pilot system enables unique processing steps and conditions not available with batch processing and allows the fabrication of a large number of devices. Results from the pilot scale system are applicable to systems processing larger areas. Utilizing the pilot system, significant progress has been made towards demonstrating consistent stability (resistance to degradation) for thin film CdTe photovoltaics. We have repeatedly shown that devices with good stability can be produced if processed at the optimum set of conditions. Small changes in processes can lead to significant differences in device stability. Among the processing steps for fabrication of CdTe devices, the CdCl2 treatment has a significant effect on performance and stability. A metric has been developed to predict the stability of devices at the time of device fabrication. Accelerated stress testing is ongoing. Extremely long duration stress testing (65°C, open circuit conditions for ∼30,000 hours with 5 hours of illumination out of 8 hour cycle) has demonstrated that the rate of efficiency loss levels out with final efficiencies in the range of 8.5% ∼ 9.5%. A production prototype system for processing nominally 2 MW/yr. is currently under construction. This system utilizes the process definition developed in the pilot system.
Keywords
II-VI semiconductors; cadmium compounds; life testing; radiation effects; semiconductor device manufacture; semiconductor device testing; solar cells; stress effects; surface treatment; thin film devices; wide band gap semiconductors; 5 hour; 65 degC; 8 hour; 8.5 to 9.5 percent; CdCl2; CdCl2 treatment; CdS-CdTe; CdTe device processing; accelerated stress testing; batch processing; continuous pilot system; degradation resistance; device fabrication; efficiency loss rate; in-line pilot system; long duration stress testing; long term CdTe device stability; open circuit conditions; pilot scale system; production prototype system; thin film CdS/CdTe devices; thin film CdTe photovoltaics; Circuit stability; Circuit testing; Degradation; Fabrication; Laboratories; Life estimation; Photovoltaic cells; Stress; Thin film devices; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
ISSN
0160-8371
Print_ISBN
0-7803-8707-4
Type
conf
DOI
10.1109/PVSC.2005.1488134
Filename
1488134
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