Title :
Single bath electrodeposition of CuInSe2 and Cu(In,Ga)Se2 for thin film photovoltaic cells
Author :
Calixto, M. Estela ; Dobson, Kevin D. ; McCandless, Brian E. ; Birkmire, Robert W.
Author_Institution :
Inst. of Energy Conversion, Delaware Univ., Newark, DE, USA
Abstract :
In this paper, an electrodeposition (ED) process for growth of CuInSe2 and Cu(In,Ga)Se2 films from single baths is presented. The use of buffered baths and careful selection of bath concentrations allows good control of the composition of the deposited films. Prior to cell processing, CuInSe2 and Cu(In,Ga)Se2 films require recrystallization by annealing in H2Se/Ar. Promising results have been obtained for ED CuInSe2- and ED Cu(In,Ga)Se2-based devices. Optimization of the selenization treatment and a better understanding of the bath chemistry and film growth mechanism are expected to lead to significant improvements in cell performance.
Keywords :
annealing; copper compounds; electrodeposition; electrodeposits; gallium compounds; indium compounds; photovoltaic cells; recrystallisation; semiconductor growth; semiconductor thin films; ternary semiconductors; thin film devices; Cu(In,Ga)Se2 film growth; Cu(In,Ga)Se2-based devices; Cu(InGa)Se2; CuInSe2; CuInSe2 film growth; CuInSe2-based devices; annealing; bath chemistry; bath concentration; buffered bath; cell performance; cell processing; electrodeposition process; film composition; film growth mechanism; recrystallization; selenization treatment optimization; single bath electrodeposition; thin film photovoltaic cells; Annealing; Atherosclerosis; Chemistry; Electrodes; Grain size; Photovoltaic cells; Semiconductor films; Thin film devices; Transistors; Vacuum technology;
Conference_Titel :
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
Print_ISBN :
0-7803-8707-4
DOI :
10.1109/PVSC.2005.1488148
