Title :
Comparison of thermal annealing behavior of radiation induced defects in lattice mismatched InGaP and AlInGaP solar cells structures
Author :
Khan, Aurangzeb ; Marupaduga, S. ; Alam, M. ; Ekins-Daukes, N.J. ; Lee, H.S. ; Sasaki, T. ; Yamaguchi, M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of South Alabama, Mobile, AL, USA
Abstract :
An investigation of lattice mismatched p-InGaP and p-AlInGaP diodes and solar cell structures has been carried out after irradiation with 1 MeV electron and subsequently after annealing. The overall spectra of the hole traps both in InGaP and AlInGaP, observed by deep level transient spectroscopy (DLTS), is slightly different. However, electron spectra are significantly different in both types of samples. Apparent correlations between the recoveries of short-circuit current and quantum efficiency, and the annealing of the H1, H2, and H3 defects is observed both in AlInGaP and InGaP. Capacitance-voltage (C-V) profile results imply that other trap levels, which were not observed by DLTS must play a more important role in the carrier removal process.
Keywords :
III-V semiconductors; aluminium compounds; annealing; crystal defects; deep level transient spectroscopy; deep levels; electron beam effects; gallium compounds; hole traps; indium compounds; internal stresses; semiconductor diodes; short-circuit currents; solar cells; 1 MeV; AlInGaP; DLTS; H1 defects; H2 defects; H3 defects; InGaP; annealing; capacitance-voltage profile; carrier removal process; deep level transient spectroscopy; electron irradiation; electron spectra; hole traps; lattice mismatched diodes; lattice mismatched solar cell structures; quantum efficiency; radiation induced defects; short-circuit current; thermal annealing behavior; trap levels; Annealing; Capacitance-voltage characteristics; Diodes; Electron traps; Hydrogen; Lattices; Mobile computing; Photonic band gap; Photovoltaic cells; Spectroscopy;
Conference_Titel :
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
Print_ISBN :
0-7803-8707-4
DOI :
10.1109/PVSC.2005.1488218
