DocumentCode :
440209
Title :
Reliability of Ultra-thin Oxides for the Giga-bit generations
Author :
Groeseneken, G. ; Degraeve, R. ; Nigam, T. ; Kaczer, B. ; Maes, H.E.
Author_Institution :
IMEC, Leuven, Belgium
Volume :
1
fYear :
1999
fDate :
13-15 Sept. 1999
Firstpage :
72
Lastpage :
80
Keywords :
Breakdown voltage; CMOS technology; Degradation; Dielectrics; Electric breakdown; Leakage current; Statistical analysis; Stress; Temperature dependence; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Conference_Location :
Leuven, Belgium
Print_ISBN :
2-86332-245-1
Type :
conf
Filename :
1505451
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=440209
