Title :
Influence of the Polysilicon Gate on the Random Dopant Induced Threshold Voltage Fluctuations in Sub 100 nm MOSFETs with Thin Gate Oxides
Author :
Asenov, A. ; Saini, S.
Author_Institution :
The University of Glasgow, UK
Keywords :
Atomic layer deposition; Doping; Epitaxial layers; Fluctuations; Lead compounds; MOSFETs; Quantization; Silicon; Threshold voltage; Tunneling;
Conference_Titel :
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Conference_Location :
Leuven, Belgium
Print_ISBN :
2-86332-245-1
