Title :
Comparison between Short Channel Bulk (Silicon) and Body-Tied Partially Depleted SOI nMOS for High Frequency Low Voltage Analog Circuit Design
Author :
Babcock, J.A. ; Francis, P. ; Ølgaard, C. ; Haggag, H. ; Darmawan, J.A. ; Archer, D.M. ; Jansen, Ph. ; Lee, M.C.L. ; Schroder, D.K.
Author_Institution :
National Semiconductor Corporation, Santa Clara, CA, USA
Keywords :
Analog circuits; Capacitance; Frequency; Impact ionization; Impedance; Low voltage; MOS devices; Silicon; Solid state circuits; Threshold voltage;
Conference_Titel :
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Conference_Location :
Leuven, Belgium
Print_ISBN :
2-86332-245-1
