A 67 GHz fmax Lateral Bipolar Transistor with Co-silicided Base Electrode Structure on Thin Film SOI for RF Analog Applications
Author :
Nii, H. ; Yamada, T. ; Inoh, K. ; Shino, T. ; Kawanaka, S. ; Minami, Y. ; Fuse, T. ; Morifuji, E. ; Ohguro, T. ; Yoshimi, M. ; Katsumata, Y. ; Watanabe, S. ; Matsunaga, J. ; Ishiuchi, H.
Author_Institution :
Toshiba Corporation, Yokohama, Japan
Volume :
1
fYear :
1999
fDate :
13-15 Sept. 1999
Firstpage :
212
Lastpage :
215
Keywords :
Bipolar transistors; Electrodes; Etching; Fabrication; Ion implantation; Laboratories; Parasitic capacitance; Radio frequency; Substrates; Thin film transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
