Title :
Investigation of the Formation Mechanism of Hemispherical Grained Silicon (HSG-Si) on Undoped and Doped Amorphous Silicon for DRAM Applications
Author :
Ils, A. ; Sallese, J.M. ; Bouvet, D. ; Fazan, P. ; Merrit, C. ; de Waard, H. ; Werkhoven, C.
Author_Institution :
Swiss Federal Institute of Technology, Lausanne, Switzerland
Keywords :
Amorphous silicon; Annealing; Capacitance; Capacitors; Dielectrics; Grain size; Leg; Random access memory; Rough surfaces; Surface roughness;
Conference_Titel :
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Conference_Location :
Leuven, Belgium
Print_ISBN :
2-86332-245-1
