Title :
Impact of the Velocity Overshoot on the Performance of NMOSFETs with Gate Lengths from 80 to 250nm
Author :
Jungemann, C. ; Meinerzhagen, B.
Author_Institution :
Universit¨at Bremen, Germany
Keywords :
Cities and towns; Dielectric devices; Doping; Impurities; Kinetic theory; MOSFETs; Monte Carlo methods; Phonons; Scattering; Uniform resource locators;
Conference_Titel :
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Conference_Location :
Leuven, Belgium
Print_ISBN :
2-86332-245-1
