DocumentCode :
440231
Title :
Impact of the Velocity Overshoot on the Performance of NMOSFETs with Gate Lengths from 80 to 250nm
Author :
Jungemann, C. ; Meinerzhagen, B.
Author_Institution :
Universit¨at Bremen, Germany
Volume :
1
fYear :
1999
fDate :
13-15 Sept. 1999
Firstpage :
236
Lastpage :
239
Keywords :
Cities and towns; Dielectric devices; Doping; Impurities; Kinetic theory; MOSFETs; Monte Carlo methods; Phonons; Scattering; Uniform resource locators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Conference_Location :
Leuven, Belgium
Print_ISBN :
2-86332-245-1
Type :
conf
Filename :
1505483
Link To Document :
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