Title :
A Unified Analytical Model for Bulk and Surface Mobility in Si n- and p-Channel MOSFET´s
Author :
Reggiani, S. ; Valdinoci, M. ; Colalongo, L. ; Baccarani, G.
Author_Institution :
University of Bologna, Italy
Keywords :
Analytical models; Charge carrier processes; Doping; MOSFET circuits; Neodymium; Numerical simulation; Scattering; Semiconductor process modeling; Silicon; Substrates;
Conference_Titel :
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Conference_Location :
Leuven, Belgium
Print_ISBN :
2-86332-245-1
