DocumentCode :
440234
Title :
Full quantummechanical treatment of charge leakage in MOS capacitors with ultra-thin oxide layers
Author :
Magnus, Wim ; Schoenmaker, Wim
Author_Institution :
IMEC, Leuven, Belgium
Volume :
1
fYear :
1999
fDate :
13-15 Sept. 1999
Firstpage :
248
Lastpage :
251
Keywords :
Electrons; Energy states; Leakage current; MOS capacitors; MOSFETs; Particle scattering; Potential energy; Resonance; Silicon; Wave functions;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Conference_Location :
Leuven, Belgium
Print_ISBN :
2-86332-245-1
Type :
conf
Filename :
1505486
Link To Document :
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