Title :
Multiple SiGe Quantum Wells - Novel Channel Architecture for 0.12 um CMOS
Author :
Alieu, J. ; Skotnicki, T. ; Regolini, J.-L. ; Bremond, G.
Author_Institution :
France Telecom CNET, Meylan, France
Keywords :
Buffer layers; CMOS process; Epitaxial growth; Epitaxial layers; Germanium silicon alloys; MOS devices; Silicon germanium; Stability; Telecommunications; Thermal degradation;
Conference_Titel :
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Conference_Location :
Leuven, Belgium
Print_ISBN :
2-86332-245-1
