• DocumentCode
    440256
  • Title

    In-Situ Arsenic Doped Single-Crystal Emitters for Low 1/f Noise Self-Aligned SiGe HBTs

  • Author

    Jouan, S. ; Planche, R. ; Marty, M. ; Dutartre, D. ; Chroboczek, J.A. ; Llinares, P. ; Baudry, H. ; de Pontcharra, J. ; Regolini, J.L. ; Vincent, G. ; Chantre, A.

  • Author_Institution
    France Telecom CNET, Meylan, France
  • Volume
    1
  • fYear
    1999
  • fDate
    13-15 Sept. 1999
  • Firstpage
    336
  • Lastpage
    339
  • Keywords
    Bipolar transistors; Circuit noise; Dry etching; Fabrication; Germanium silicon alloys; Heterojunction bipolar transistors; Radio frequency; Reproducibility of results; Silicon germanium; Wet etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 1999. Proceeding of the 29th European
  • Conference_Location
    Leuven, Belgium
  • Print_ISBN
    2-86332-245-1
  • Type

    conf

  • Filename
    1505508
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=440256