DocumentCode :
440256
Title :
In-Situ Arsenic Doped Single-Crystal Emitters for Low 1/f Noise Self-Aligned SiGe HBTs
Author :
Jouan, S. ; Planche, R. ; Marty, M. ; Dutartre, D. ; Chroboczek, J.A. ; Llinares, P. ; Baudry, H. ; de Pontcharra, J. ; Regolini, J.L. ; Vincent, G. ; Chantre, A.
Author_Institution :
France Telecom CNET, Meylan, France
Volume :
1
fYear :
1999
fDate :
13-15 Sept. 1999
Firstpage :
336
Lastpage :
339
Keywords :
Bipolar transistors; Circuit noise; Dry etching; Fabrication; Germanium silicon alloys; Heterojunction bipolar transistors; Radio frequency; Reproducibility of results; Silicon germanium; Wet etching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Conference_Location :
Leuven, Belgium
Print_ISBN :
2-86332-245-1
Type :
conf
Filename :
1505508
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=440256
