Title :
Effects of Carbon Doping on the 1/f noise in SiGe HBTs
Author :
Gruhle, A. ; Kibbel, H. ; König, U. ; Mähner, C. ; Mroczek, W.
Author_Institution :
DaimlerChrysler Research Center, Ulm, Germany
Keywords :
Boron; Carbon dioxide; Degradation; Doping; Germanium silicon alloys; Heterojunction bipolar transistors; Low-frequency noise; Semiconductor device noise; Shape measurement; Silicon germanium;
Conference_Titel :
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Conference_Location :
Leuven, Belgium
Print_ISBN :
2-86332-245-1
