Title :
Leakage Current Mechanisms Associated with Selective Epitaxy in SiGe Heterojunction Bipolar Transistors
Author :
Schiz, J. ; Bonar, J.M. ; Cristiano, Fuccio ; Ashburn, Peter ; Hemment, P.L.F. ; Hall, Sebastian
Author_Institution :
University of Southampton, UK
Keywords :
Art; Capacitance-voltage characteristics; Doping; Epitaxial growth; Germanium silicon alloys; Heterojunction bipolar transistors; Leakage current; MOSFETs; Semiconductor films; Silicon germanium;
Conference_Titel :
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Conference_Location :
Leuven, Belgium
Print_ISBN :
2-86332-245-1
