• DocumentCode
    440259
  • Title

    Characteristics of Deep Traps in Si(1-x)Ge(x) Epitaxial Base Submicron Bipolar Transistors

  • Author

    Militaru, L. ; Souifi, A. ; Mouis, M. ; Chantre, A. ; Brémond, G.

  • Author_Institution
    LPM INSA, Villeurbanne, France
  • Volume
    1
  • fYear
    1999
  • fDate
    13-15 Sept. 1999
  • Firstpage
    348
  • Lastpage
    351
  • Keywords
    Bipolar transistors; Current measurement; Degradation; Germanium silicon alloys; Photonic band gap; Silicon germanium; Temperature dependence; Temperature distribution; Temperature sensors; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 1999. Proceeding of the 29th European
  • Conference_Location
    Leuven, Belgium
  • Print_ISBN
    2-86332-245-1
  • Type

    conf

  • Filename
    1505511
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=440259