Title :
Characteristics of Deep Traps in Si(1-x)Ge(x) Epitaxial Base Submicron Bipolar Transistors
Author :
Militaru, L. ; Souifi, A. ; Mouis, M. ; Chantre, A. ; Brémond, G.
Author_Institution :
LPM INSA, Villeurbanne, France
Keywords :
Bipolar transistors; Current measurement; Degradation; Germanium silicon alloys; Photonic band gap; Silicon germanium; Temperature dependence; Temperature distribution; Temperature sensors; Tunneling;
Conference_Titel :
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Conference_Location :
Leuven, Belgium
Print_ISBN :
2-86332-245-1
