Title :
Reliability Issues of Through-the-Gate-Implanted Utra-Thin Gate Oxides
Author :
Grunsfelder, C. ; Kerber, M. ; Schwalke, U.
Author_Institution :
Infineon Technologies AG, Munich, Germany
Keywords :
Annealing; Boron; CMOS process; Capacitors; Cleaning; Dielectrics; Fabrication; Lead compounds; MOS devices; Oxidation;
Conference_Titel :
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Conference_Location :
Leuven, Belgium
Print_ISBN :
2-86332-245-1
