DocumentCode :
440263
Title :
Time stability of Stress Induced Leakage Current in thin gate oxides
Author :
Cester, A. ; Paccagnella, A. ; Buso, M. ; Ghidini, G.
Author_Institution :
Universita di Padova, Italy
Volume :
1
fYear :
1999
fDate :
13-15 Sept. 1999
Firstpage :
368
Lastpage :
371
Keywords :
Carbon capture and storage; Current density; Current measurement; Electrons; Leakage current; Stability; Steady-state; Stress measurement; Temperature; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Conference_Location :
Leuven, Belgium
Print_ISBN :
2-86332-245-1
Type :
conf
Filename :
1505516
Link To Document :
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