DocumentCode :
440264
Title :
Investigation of the Threshold Voltage Difference between Partially-Depleted SOI and bulk CMOS transistors
Author :
Meer, Hans Van ; Lyu, Jeong-Ho ; Kubicek, S. ; Meyer, Kristin De
Author_Institution :
IMEC, Leuven, Belgium
Volume :
1
fYear :
1999
fDate :
13-15 Sept. 1999
Firstpage :
372
Lastpage :
375
Keywords :
Boron; CMOS process; CMOS technology; Doping; Fabrication; Indium; MOS devices; MOSFETs; Silicon; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Conference_Location :
Leuven, Belgium
Print_ISBN :
2-86332-245-1
Type :
conf
Filename :
1505517
Link To Document :
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