Title :
Suitability of Elevated Source/Drain for Deep Submicron CMOS
Author :
Gwoziecki, R. ; Jurczak, M. ; Skotnicki, T. ; Regolini, J.L. ; Paoli, M.
Author_Institution :
France Telecom CNET, Meylan, France
Keywords :
CMOS technology; Doping; Electric resistance; Fabrication; MOS devices; MOSFET circuits; Silicidation; Space technology; Telecommunications; Transistors;
Conference_Titel :
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Conference_Location :
Leuven, Belgium
Print_ISBN :
2-86332-245-1
