Title :
Performance, New Short and Narrow Channel Effects and Manufacturability with Si Epitaxial channel for low voltage and low power 0.12/0.18 um CMOS applications
Author :
Alieu, J. ; Gwoziecki, R. ; Regolini, J.L. ; Skotnicki, T. ; Haond, M.
Author_Institution :
STMicroelectronics, Crolles, France
Keywords :
Annealing; Boron; Epitaxial growth; Implants; Low voltage; MOS devices; Manufacturing; Microelectronics; Substrates; Telecommunications;
Conference_Titel :
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Conference_Location :
Leuven, Belgium
Print_ISBN :
2-86332-245-1
