• DocumentCode
    440267
  • Title

    Performance, New Short and Narrow Channel Effects and Manufacturability with Si Epitaxial channel for low voltage and low power 0.12/0.18 um CMOS applications

  • Author

    Alieu, J. ; Gwoziecki, R. ; Regolini, J.L. ; Skotnicki, T. ; Haond, M.

  • Author_Institution
    STMicroelectronics, Crolles, France
  • Volume
    1
  • fYear
    1999
  • fDate
    13-15 Sept. 1999
  • Firstpage
    400
  • Lastpage
    403
  • Keywords
    Annealing; Boron; Epitaxial growth; Implants; Low voltage; MOS devices; Manufacturing; Microelectronics; Substrates; Telecommunications;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 1999. Proceeding of the 29th European
  • Conference_Location
    Leuven, Belgium
  • Print_ISBN
    2-86332-245-1
  • Type

    conf

  • Filename
    1505524
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=440267