Title :
On the difference in threshold voltage dependence on channel length for boron and indium channel nMOS transistors
Author :
Kubicek, Stefan ; Lyu, Jeong-Ho ; Van Meer, Hans ; De Meyer, Kristin
Author_Institution :
IMEC, Leuven, Belgium
Keywords :
Annealing; Boron; CMOS process; Furnaces; Indium; MOS devices; MOSFETs; Threshold voltage;
Conference_Titel :
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Conference_Location :
Leuven, Belgium
Print_ISBN :
2-86332-245-1