DocumentCode :
440268
Title :
On the difference in threshold voltage dependence on channel length for boron and indium channel nMOS transistors
Author :
Kubicek, Stefan ; Lyu, Jeong-Ho ; Van Meer, Hans ; De Meyer, Kristin
Author_Institution :
IMEC, Leuven, Belgium
Volume :
1
fYear :
1999
fDate :
13-15 Sept. 1999
Firstpage :
404
Lastpage :
407
Keywords :
Annealing; Boron; CMOS process; Furnaces; Indium; MOS devices; MOSFETs; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Conference_Location :
Leuven, Belgium
Print_ISBN :
2-86332-245-1
Type :
conf
Filename :
1505525
Link To Document :
بازگشت