Electrical Characteristics of Ultra-thin Gate Oxide Prepared by Oxidation in D2O

Author

Kwon, Hyungshin ; Hwang, Hyunsang

Author_Institution

KJIST, Kwangju, Korea

Volume

fYear

1999

fDate

13-15 Sept. 1999

Firstpage

416

Lastpage

419

Keywords

Annealing; Deuterium; Dielectrics; Electric variables; Hot carriers; MOSFET circuits; Oxidation; Silicon; Stress; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 1999. Proceeding of the 29th European

Conference_Location

Leuven, Belgium

Print_ISBN

2-86332-245-1

Type

Filename

1505528

Link To Document