Title :
Electrical Characteristics of Ultra-thin Gate Oxide Prepared by Oxidation in D2O
Author :
Kwon, Hyungshin ; Hwang, Hyunsang
Author_Institution :
KJIST, Kwangju, Korea
Keywords :
Annealing; Deuterium; Dielectrics; Electric variables; Hot carriers; MOSFET circuits; Oxidation; Silicon; Stress; Temperature;
Conference_Titel :
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Conference_Location :
Leuven, Belgium
Print_ISBN :
2-86332-245-1
