Title :
Silicon Nitridation by Nitric Oxide (NO) for Ta2O5 Gate Dielectric Application in MOS Devices
Author :
Devoivre, T. ; Martin, F. ; Papadas, C. ; Setton, M.
Author_Institution :
STMicroelectronics, Meylan, France
Keywords :
CMOS process; Dielectric constant; Dielectric devices; MOS devices; MOSFETs; Optical films; Oxidation; Silicon; Substrates; Temperature;
Conference_Titel :
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Conference_Location :
Leuven, Belgium
Print_ISBN :
2-86332-245-1
