DocumentCode :
440274
Title :
Structure and Memory Effects of Low Energy Ge-Implanted Thin SiO2 Films
Author :
Kapetanakis, E. ; Normand, P. ; Tsoukalas, D. ; Beltsios, K. ; Travlos, T. ; Gautier, J. ; Palun, L. ; Jourdan, F.
Author_Institution :
National Centre for Scientific Research "Demokritos", Aghia Paraskevi, Greece
Volume :
1
fYear :
1999
fDate :
13-15 Sept. 1999
Firstpage :
432
Lastpage :
435
Keywords :
Amorphous materials; Annealing; Capacitance-voltage characteristics; Capacitors; Electron traps; Glass; Material storage; Temperature; Transmission electron microscopy; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Conference_Location :
Leuven, Belgium
Print_ISBN :
2-86332-245-1
Type :
conf
Filename :
1505532
Link To Document :
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