DocumentCode :
440275
Title :
A 0.35um BiCMOS Process with Selective Epitaxial SiGe Bipolar Transistors
Author :
Kuhn, R. ; Decouter, S. ; Caymax, M. ; Vleugels, F. ; Verschooten, E. ; Loo, R. ; Loheac, J.-L.
Author_Institution :
IMEC, Leuven, Belgium
Volume :
1
fYear :
1999
fDate :
13-15 Sept. 1999
Firstpage :
436
Lastpage :
439
Keywords :
BiCMOS integrated circuits; Bipolar transistors; Boron; Etching; Germanium silicon alloys; Heterojunction bipolar transistors; Human computer interaction; Joining processes; Silicon germanium; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Conference_Location :
Leuven, Belgium
Print_ISBN :
2-86332-245-1
Type :
conf
Filename :
1505533
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=440275
