440277

Direct Extraction of Intrinsic Excess Phase Shift Time Constants in SiGe HBTs

Hamel, J.S. ; Leach, G.R. ; Anteney, I.M.

University of Southampton, UK

1

1999

13-15 Sept. 1999

456

459

Bipolar transistors; Computer science; Data mining; Equivalent circuits; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Parasitic capacitance; Scattering parameters; Silicon germanium;

English

ieee

Solid-State Device Research Conference, 1999. Proceeding of the 29th European

Leuven, Belgium

2-86332-245-1

conf

1505538