Title :
A robust curve tracing scheme for the simulation of bipolar breakdown characteristics with nonlocal impact ionization models
Author :
Bartels, Marcus ; Decker, Stefan ; Neinhus, B. ; Meinerzhagen, B.
Author_Institution :
Universit¨at Bremen, Germany
Abstract :
The authors propose a robust curve tracing scheme for the simulation of the complete Ic(Vce)|Is=0 breakdown characteristic of a bipolar transistor including snapback effects. Compared to classical curve tracing schemes, this new algorithm does not require the complete Jacobian matrix and/or external resistors of arbitrary size at the device contacts. Therefore it allows the application of nonlocal impact ionization models for the evaluation of bipolar breakdown characteristics.
Keywords :
Electric breakdown; Impact ionization; MOS devices; Parameter extraction; Principal component analysis; Robustness; Semiconductor device modeling;
Conference_Titel :
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Conference_Location :
Leuven, Belgium
Print_ISBN :
2-86332-245-1
