Title :
Simulation of 0.15 Micron CMOS Device Performance
Author :
Jones, S.K. ; Badenes, G.
Author_Institution :
Marconi Materials Technology, Northants, United Kingdom
Keywords :
Acceleration; Capacitance; Doping; MOS devices; MOSFET circuits; Materials science and technology; Performance analysis; Predictive models; Process design; Protection;
Conference_Titel :
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Conference_Location :
Leuven, Belgium
Print_ISBN :
2-86332-245-1
