DocumentCode :
440288
Title :
Gate Workfunction Engineering for Deep Submicron CMOS
Author :
Dachs, C.J.J. ; Ponomarev, Y.V. ; Stolk, P.A. ; Montree, A.H.
Author_Institution :
Philips Research Laboratories, Eindhoven, The Netherlands
Volume :
1
fYear :
1999
fDate :
13-15 Sept. 1999
Firstpage :
500
Lastpage :
503
Keywords :
Boron; CMOS technology; Design optimization; Doping profiles; Implants; Inorganic materials; MOS devices; MOSFETs; Power engineering and energy; Semiconductor materials;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Conference_Location :
Leuven, Belgium
Print_ISBN :
2-86332-245-1
Type :
conf
Filename :
1505549
Link To Document :
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