440291

Impact of the SOI Substrate Parameters on the Radio-frequency Performance of the Quasi-SOI Power MOSFET

Matsumoto, Satoshi ; Hiraoka, Yasushi ; Yachi, Toshiaki ; Kosugi, Toshihiko ; Kamitsuna, Hideki ; Muraguchi, Masahiro

NTT Telecommunication Energy Laboratories, Tokyo, Japan

1

1999

13-15 Sept. 1999

528

531

Cutoff frequency; Laboratories; MOSFET circuits; Microwave circuits; Power MOSFET; Radio frequency; Silicon on insulator technology; Structural engineering; Substrates; Technological innovation;

English

ieee

Solid-State Device Research Conference, 1999. Proceeding of the 29th European

Leuven, Belgium

2-86332-245-1

conf

1505556