مرکز منطقه ای اطلاع رساني علوم و فناوري - 0.15um Leff Buried Channel PFET Device Design

DocumentCode :

440293

Title :

0.15um Leff Buried Channel PFET Device Design

Author :

Rengarajan, R. ; Weybright, M. ; Faltermeier, J. ; Butt, S. ; Lee, H. ; Slisher, D. ; Ronsheim, P. ; Murphy, C.S. ; Dellow, M. ; Divakaruni, R.

Author_Institution :

Siemens Microelectronics Inc., Hopewell Junction, NY, USA

Volume :

fYear :

1999

fDate :

13-15 Sept. 1999

Firstpage :

536

Lastpage :

539

Keywords :

Aluminum; Boron; Costs; Dielectrics; Electric variables; Fabrication; Microelectronic implants; Random access memory; Space technology; Stress;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Solid-State Device Research Conference, 1999. Proceeding of the 29th European

Conference_Location :

Leuven, Belgium

Print_ISBN :

2-86332-245-1

Type :

conf

Filename :

1505558

Link To Document :