0.15um Leff Buried Channel PFET Device Design

Author

Rengarajan, R. ; Weybright, M. ; Faltermeier, J. ; Butt, S. ; Lee, H. ; Slisher, D. ; Ronsheim, P. ; Murphy, C.S. ; Dellow, M. ; Divakaruni, R.

Author_Institution

Siemens Microelectronics Inc., Hopewell Junction, NY, USA

Volume

fYear

1999

fDate

13-15 Sept. 1999

Firstpage

536

Lastpage

539

Keywords

Aluminum; Boron; Costs; Dielectrics; Electric variables; Fabrication; Microelectronic implants; Random access memory; Space technology; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 1999. Proceeding of the 29th European

Conference_Location

Leuven, Belgium

Print_ISBN

2-86332-245-1

Type

Filename

1505558

Link To Document