High-Breakdown and High-Linearity Ga(0.51)In(0.49P)/In(0.15)Ga(0.85)As Pseudomorphic HEMT´s Prepared by Selectively Removing Mesa Sidewalls

Author

Liu, W.C. ; Chang, W.L. ; Pan, H.J. ; Wang, W.C. ; Chen, J.Y. ; Yu, K.H. ; Feng, S.C.

Author_Institution

National Cheng Kung University, Tainan, Taiwan

Volume

fYear

1999

fDate

13-15 Sept. 1999

Firstpage

552

Lastpage

555

Keywords

Etching; FETs; Gallium arsenide; HEMTs; Indium gallium arsenide; Insulation; Intrusion detection; Linearity; MODFETs; Metal-insulator structures;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 1999. Proceeding of the 29th European

Conference_Location

Leuven, Belgium

Print_ISBN

2-86332-245-1

Type

Filename

1505562

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