Title :
High-Breakdown and High-Linearity Ga(0.51)In(0.49P)/In(0.15)Ga(0.85)As Pseudomorphic HEMT´s Prepared by Selectively Removing Mesa Sidewalls
Author :
Liu, W.C. ; Chang, W.L. ; Pan, H.J. ; Wang, W.C. ; Chen, J.Y. ; Yu, K.H. ; Feng, S.C.
Author_Institution :
National Cheng Kung University, Tainan, Taiwan
Keywords :
Etching; FETs; Gallium arsenide; HEMTs; Indium gallium arsenide; Insulation; Intrusion detection; Linearity; MODFETs; Metal-insulator structures;
Conference_Titel :
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Conference_Location :
Leuven, Belgium
Print_ISBN :
2-86332-245-1
