440298

Noise modeling of InP- based base and collector self-aligned double heterojunction bipolar transistors

Danelon, V. ; Aniel, F. ; Crozat, P. ; Adde, R. ; Vernet, G. ; Blayac, S. ; Riet, M.

Universite Paris-Sud, Orsay, France

1

1999

13-15 Sept. 1999

556

559

Double heterojunction bipolar transistors; Frequency; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Integrated circuit noise; Low-frequency noise; Noise level; Noise measurement; Phase noise;

English

ieee

Solid-State Device Research Conference, 1999. Proceeding of the 29th European

Leuven, Belgium

2-86332-245-1

conf

1505563