DocumentCode :
440299
Title :
High-Performance Delta-Doped InGaP/GaAs Heterojunction Bipolar Transistors
Author :
Liu, W.C. ; Pan, H.J. ; Cheng, S.-Y. ; Chen, J.Y. ; Wang, W.C. ; Thei, K.B.
Author_Institution :
National Cheng Kung University, Tainan, Taiwan
Volume :
1
fYear :
1999
fDate :
13-15 Sept. 1999
Firstpage :
560
Lastpage :
563
Keywords :
Bipolar transistors; Double heterojunction bipolar transistors; Electrons; Energy consumption; Gallium arsenide; Heterojunction bipolar transistors; Low voltage; Microwave circuits; Performance gain; Spontaneous emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Conference_Location :
Leuven, Belgium
Print_ISBN :
2-86332-245-1
Type :
conf
Filename :
1505564
Link To Document :
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