Title :
Impact of Elevated Source/Drain on the Reverse Short Channel Effect
Author :
Schumann, D. ; Cappellani, A. ; Hammerl, E. ; Krieg, R. ; Pindl, S. ; Schäfer, H.
Author_Institution :
Infineon Technologies AG, Munich, Germany
Keywords :
CMOS process; Doping; Epitaxial growth; Length measurement; MOSFETs; Oxidation; Performance evaluation; Silicon; Temperature distribution; Threshold voltage;
Conference_Titel :
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Conference_Location :
Leuven, Belgium
Print_ISBN :
2-86332-245-1
