مرکز منطقه ای اطلاع رساني علوم و فناوري - A High Performance 0.18 um Elevated Source/Drain Technology with Improved Manufacturability

DocumentCode :

440307

Title :

A High Performance 0.18 um Elevated Source/Drain Technology with Improved Manufacturability

Author :

Augendre, E. ; Rooyackers, R. ; Vandamme, E. ; Perelló, C. ; Dievel, M. Van ; Pochet, S. ; Badenes, G.

Author_Institution :

IMEC, Leuven, Belgium

Volume :

fYear :

1999

fDate :

13-15 Sept. 1999

Firstpage :

636

Lastpage :

639

Keywords :

Electrodes; Epitaxial growth; Fabrication; Frequency measurement; MOS devices; MOSFETs; Manufacturing processes; Silicidation; Silicides; Silicon;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Solid-State Device Research Conference, 1999. Proceeding of the 29th European

Conference_Location :

Leuven, Belgium

Print_ISBN :

2-86332-245-1

Type :

conf

Filename :

1505583

Link To Document :