DocumentCode :
440308
Title :
Effects of Ge Preamorphization on the Specific Contact Resistance of TiSi2 to Silicon
Author :
Melick, N. G H Van ; Kaiser, M. ; Montree, A.H.
Author_Institution :
Philips Research Laboratories, Eindhoven, The Netherlands
Volume :
1
fYear :
1999
fDate :
13-15 Sept. 1999
Firstpage :
640
Lastpage :
643
Keywords :
Artificial intelligence; CMOS process; Contact resistance; Electrical resistance measurement; Implants; Laboratories; Silicides; Silicon; Surface resistance; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Conference_Location :
Leuven, Belgium
Print_ISBN :
2-86332-245-1
Type :
conf
Filename :
1505584
Link To Document :
بازگشت