DocumentCode
440312
Title
Lateral dependence of dopant-number threshold voltage fluctuations in MOSFETs
Author
Cochet, T. ; Skotnicki, T. ; Ghibaudo, G. ; Poncet, A.
Author_Institution
France Telecom CNET, Meylan, France
Volume
1
fYear
1999
fDate
13-15 Sept. 1999
Firstpage
680
Lastpage
683
Keywords
Analytical models; Circuit synthesis; Design optimization; Doping; Fluctuations; MOSFETs; Numerical simulation; Semiconductor process modeling; Solid modeling; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Conference_Location
Leuven, Belgium
Print_ISBN
2-86332-245-1
Type
conf
Filename
1505594
Link To Document