DocumentCode :
440312
Title :
Lateral dependence of dopant-number threshold voltage fluctuations in MOSFETs
Author :
Cochet, T. ; Skotnicki, T. ; Ghibaudo, G. ; Poncet, A.
Author_Institution :
France Telecom CNET, Meylan, France
Volume :
1
fYear :
1999
fDate :
13-15 Sept. 1999
Firstpage :
680
Lastpage :
683
Keywords :
Analytical models; Circuit synthesis; Design optimization; Doping; Fluctuations; MOSFETs; Numerical simulation; Semiconductor process modeling; Solid modeling; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Conference_Location :
Leuven, Belgium
Print_ISBN :
2-86332-245-1
Type :
conf
Filename :
1505594
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=440312
بازگشت