Title :
Simulation study of the impact of channel doping profiles on MOSFET analog performances
Author :
Fiegna, Claudio ; Abramo, Antonio ; Sangiorgi, Enrico
Author_Institution :
Universita di Ferrara, Italy
Keywords :
Analog circuits; Bipolar transistors; Capacitance; Cutoff frequency; Doping profiles; Epitaxial growth; Guidelines; MOSFET circuits; Radio frequency; Steady-state;
Conference_Titel :
Solid-State Device Research Conference, 1999. Proceeding of the 29th European
Conference_Location :
Leuven, Belgium
Print_ISBN :
2-86332-245-1
