• DocumentCode
    440320
  • Title

    Anomalous Collector-Base Leakage in Selectively Grown SiGe-Base Heterojunction Bipolar Transistors

  • Author

    Terpstra, D. ; de Boer, W.B.

  • Author_Institution
    Philips Research Laboratories, Eindhoven, The Netherlands
  • Volume
    1
  • fYear
    1999
  • fDate
    13-15 Sept. 1999
  • Firstpage
    720
  • Lastpage
    723
  • Keywords
    Bipolar transistors; Diodes; Epitaxial growth; Germanium silicon alloys; Heterojunction bipolar transistors; Leakage current; Silicon germanium; Substrates; Temperature dependence; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 1999. Proceeding of the 29th European
  • Conference_Location
    Leuven, Belgium
  • Print_ISBN
    2-86332-245-1
  • Type

    conf

  • Filename
    1505604
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=440320