440320

Anomalous Collector-Base Leakage in Selectively Grown SiGe-Base Heterojunction Bipolar Transistors

Terpstra, D. ; de Boer, W.B.

Philips Research Laboratories, Eindhoven, The Netherlands

1

1999

13-15 Sept. 1999

720

723

Bipolar transistors; Diodes; Epitaxial growth; Germanium silicon alloys; Heterojunction bipolar transistors; Leakage current; Silicon germanium; Substrates; Temperature dependence; Voltage;

English

ieee

Solid-State Device Research Conference, 1999. Proceeding of the 29th European

Leuven, Belgium

2-86332-245-1

conf

1505604