440321

SiGe HBT Performance Improvements from Lateral Scaling

Freeman, G. ; Greenberg, D.R. ; Walter, K. ; Subbanna, S.

IBM Microelectronics, Hopewell Junction, NY, USA

1

1999

13-15 Sept. 1999

724

727

BiCMOS integrated circuits; CMOS technology; Electric resistance; Electric variables measurement; Electrical resistance measurement; Germanium silicon alloys; Heterojunction bipolar transistors; Power dissipation; Semiconductor process modeling; Silicon germanium;

English

ieee

Solid-State Device Research Conference, 1999. Proceeding of the 29th European

Leuven, Belgium

2-86332-245-1

conf

1505605